* 20V,30A, RDS(ON) =10mΩ @VGS = 10V
* Improved dv/dt capability
* ESD Protection Diode Embedded
* Green Device Available
Applications
* MB / VGA / Vc.
PPAK3x3 Pin Configuration
DD D D SS SG
G
D S
PDEC2310Z
BVDSS 20V
RDSON 10m
ID 30A
Features
* 20V,30A, RDS.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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